کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572353 | 1503706 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field emission characteristics of oriented-AlN thin film on tungsten tip
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
(0Â 0Â 2) Oriented-aluminum nitride (AlN) films with different thicknesses were deposited on tungsten (W) tips by using radio frequency magnetron reactive sputtering system. Compared studies of field emission (FE) characteristics were performed between the bare and AlN coated W tips. The results showed that enhanced electron emission could be obtained from oriented-AlN film on W tip. The hysteresis behaviors shown in Current-electric field (I-E) curves during downward electric field sweeps were observed, and the extent of hysteresis in I-E curves strongly depended on the thickness of the AlN film. The stability measurement of FE current presented that the hysteresis could be attributed to the charging in AlN film as an insulator.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 251, Issues 1â4, 15 September 2005, Pages 215-219
Journal: Applied Surface Science - Volume 251, Issues 1â4, 15 September 2005, Pages 215-219
نویسندگان
S.L. Yue, C.Z. Gu, C.Y. Shi, C.Y. Zhi,