کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572397 | 1503708 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Excimer laser modification of thin AlN films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The potential of excimer laser micro-processing for surface modification of aluminum nitride (AlN) thin films was studied. Thin films of AlN were deposited by plasma-source molecular beam epitaxy (PSMBE) on silicon and sapphire substrates. These films were then exposed to different fluence levels of KrF (λ = 248 nm) excimer laser radiation in an ambient air environment, and the changes in the film surface were studied by X-ray photoelectron spectroscopy, atomic force microscopy and optical spectrophotometry. The results show that there is a narrow range of laser fluences, just above 1.0 J/cm2, within which mostly photochemical transformations of the film surface take place. These transformations consist of both oxidation and decomposition to metallic Al of the original film within a very thin sub-surface layer with thickness of several tens of nanometers. No changes were observed at fluences below 1.0 J/cm2. Above a fluence of 1.0 J/cm2, severe photomechanical damage consisting of film cracking and detachment was found to accompany the photochemical and photothermal changes in the film.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 249, Issues 1â4, 15 August 2005, Pages 45-53
Journal: Applied Surface Science - Volume 249, Issues 1â4, 15 August 2005, Pages 45-53
نویسندگان
D.G. Georgiev, L.W. Rosenberger, Y.V. Danylyuk, R.J. Baird, G. Newaz, G. Shreve, G. Auner,