کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572400 | 1503708 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dopant effect on in situ doped metal-induced lateral crystallization of amorphous silicon films
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Dopant (boron or phosphorus) effect on metal-induced lateral crystallization (MILC) of amorphous silicon (a-Si) films has been systematically studied by using scanning electron microscopy (SEM) and X-ray diffraction (XRD). The MILC was realized by depositing a-Si film onto an oxidized Si wafer and then annealing in a N2 atmosphere. The doped amorphous films have been developed by plasma-enhanced chemical vapor deposition (PECVD). Various dopant gases and annealing times were investigated to study dopant effects on MILC films. It has been found that the un-doped poly-Si film has a MILC length larger than that of samples doped with boron or phosphorus. The phosphorus-doped films exhibit larger grain size as compared with un-doped and boron-doped films. Larger MILC length is obtained by increasing annealing time, but the MILC rate is decreased. In addition, nickel-silicides were found in the doped samples by XRD. Physical mechanisms for these experimental results are proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 249, Issues 1â4, 15 August 2005, Pages 65-70
Journal: Applied Surface Science - Volume 249, Issues 1â4, 15 August 2005, Pages 65-70
نویسندگان
Jun-Dar Hwang, Jyh-Yeu Chang, Ching-Yuan Wu,