کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9572526 | 1503715 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Field emission from hafnium oxynitride films prepared by ion beam-assisted deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
HfNxOy films are deposited by ion beam-assisted deposition on (1 0 0) silicon substrates at room temperature. According to X-ray diffraction analysis, at least two phases exist in HfNxOy film, and X-ray photoelectron spectroscopy results are in good agreement with these analysis. Both annealing and increasing assisting ion beam current increase the concentration of the β-Hf7O8N4 phase in HfNxOy films. Field emission with low turn on field is reported. Field emission results suggest that the concentration of β-Hf7O8N4 plays an important role in field emission properties. Hydrogen plasma treatment also enhances field emission properties. These results indicate that the HfNxOy film is an excellent material for field emitter.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 242, Issues 3â4, 15 April 2005, Pages 407-411
Journal: Applied Surface Science - Volume 242, Issues 3â4, 15 April 2005, Pages 407-411
نویسندگان
Yongjin Wang, Jihua Zhang, Fumin Zhang, Feng Zhang, Shichang Zou,