Impurity and vacancy clustering at the Σ3(1 1 1)[1 −1 0] grain boundary in strontium titanate

Substitutional doping of the Ti columns next to the boundary plane with formally 3+ cations yields a contraction compared with the pure boundary. The same result, accompanied by more pronounced local geometry changes, is obtained for the translation state in the presence of O vacancies. Neutral O vacancies in the boundary plane are the most stable species followed by positively charged O vacancies in the neighbouring Sr/O plane parallel to the boundary. The Fermi level is shifted either upward to metal-derived states by substitutional doping or downward into the O-2p manifold for O vacancies. These findings may rationalise both the observed low, mainly electronic, grain boundary conductivity of SrTiO3 boundaries and the changes in local potential found at the grain boundary by tunnelling and force microscopy experiments.