Site-specific fragmentation caused by Si:1s core-level photoionization of F3SiCH2CH2Si(CH3)3 vapor

Ionic fragmentation caused by Si:1s photoionization of 1-trifluorosilyl-2-trimethylsilylethane [F3SiCH2CH2Si(CH3)3] vapor was studied by the energy-selected photoelectron photoion coincidence method and monochromatized synchrotron radiation. In the 1s photoionization at the Si atom bonded to three F atoms, H+ exceeded the other ions in the peak height, and production of SiF3+ ion seemed to be reduced. On the other hand, the 1s photoionization at the other Si atom bonded to three CH3 groups enhanced production of H+ ion with high kinetic energy. These results suggest that Si:1s photoionization causes site-specific fragmentation.