کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9578177 | 1505207 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Well-ordered semiconducting linearly joined carbon nanotube devices at room temperature
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The development of a simple and reliable fabrication method for well-ordered semiconducting carbon nanotubes (CNTs) at room temperature is very important for future applications. We have succeeded in fabricating well-ordered CNT devices, which are linearly joined with two different diameter tubes and show a semiconducting characteristic at room temperature, by using well-ordered porous anodic alumina membranes and by annealing at a high temperature. The band gap was about 0.3 V and could be altered by changing the diameter ratio of the two tubes. These well-ordered semiconducting CNT devices could be used in fabrication of nanoscale electronic devices like field-effect transistors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics Letters - Volume 402, Issues 4â6, 4 February 2005, Pages 535-538
Journal: Chemical Physics Letters - Volume 402, Issues 4â6, 4 February 2005, Pages 535-538
نویسندگان
Hyunyoung Jung, Jurae Kim, Joeoong Hahn, Jung Sang Suh,