N-channel organic field-effect transistors using N,N′-ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide and a polymeric dielectric

Organic field-effect transistors were fabricated using N,N′-ditridecylperylene-3, 4, 9, 10-tetracarboxylic diimide (PTCDI-C13H27) as the active material and a polymeric insulator polymethylmethacrylate (PMMA) as the gate dielectric. A mobility value of 1.7 × 10−2 cm2 V−1 s−1 was estimated from the transistor characteristics. The threshold voltage was 0.2 V and the inverse subthreshold slope was 7.6 V/decade. At low gate and high drain voltages, the device exhibits injection of holes from the Al drain electrode. This was rectified by using LiF as a buffer layer between Al and (PTCDI-C13H27). Such modified devices exhibited mobility 1.2 × 10−2 cm2 V−1 s−1, threshold voltage −0.3 V, and inverse subthreshold swing of 5 V/decade.