کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594518 | 1507964 | 2005 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(1Â 1Â 1) substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Growth of ultrathin pentacene films is investigated as a function of coverage by atomic force microscopy. Initially, pentacene grows as monolayer fractal islands and evolves into compact islands before coalescence. Stabilization factors, against diffusion-limited-aggregation in terms of interaction between islands and interlayer monomer transport, are proposed to explain the shape transition. Simulations based on a simple model of heterogeneous film growth are found to agree with experimental observations. The role of surface diffusion in island shape transition is revealed by a comparison between pentacene growth on the hydrogen terminated and oxidized Si substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 595, Issues 1â3, 5 December 2005, Pages 157-164
Journal: Surface Science - Volume 595, Issues 1â3, 5 December 2005, Pages 157-164
نویسندگان
W.J. Huang, B.Q. Li, J.M. Zuo,