Scattering of electrons by polar optical phonons in AlGaN/GaN single heterostructures

Electron-phonon scattering rates in the conduction band of III-V nitride-based systems with single interfaces are calculated using the dielectric continuum model for the interface and half-space polar optical phonon modes. The particular case of the AlxGa1−xN/GaN system is studied taking into account different values of the Al molar fraction, and a one-dimensional conduction band profile typical of a field effect transistor. The potential energy function in the GaN region is described in a way that includes many-body effects in the two-dimensional electron gas through a one-dimensional local-density Hartree potential. The contribution of the different oscillation modes to the total rates is discussed.