کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594582 1507968 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Energy scaling and surface patterning of halogen-terminated Si(0 0 1) surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Energy scaling and surface patterning of halogen-terminated Si(0 0 1) surfaces
چکیده انگلیسی
We show that steric repulsion energies between halogen dimers on a passivated Si(0 0 1) surface scale with square of the principle quantum number (or period) n of the halogen, and arise principally from bonding with Si substrate. We exemplify the scaling from previously calculated steric interactions of F, Cl, and Br, predict the interactions for I and At, and then verify the prediction by direct density-functional calculations. From the energetics, we explain the patterning of the halogen-terminated Si(0 0 1), for a better understanding of the halogen-roughening process, and predict a crossover to a new vacancy-line defect for large halogens.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 591, Issues 1–3, 20 October 2005, Pages L292-L298
نویسندگان
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