کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594592 | 1507968 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electronic structures of Ag/Ge(0Â 0Â 1) surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electronic structures of Ag/Ge(0Â 0Â 1) surfaces Electronic structures of Ag/Ge(0Â 0Â 1) surfaces](/preview/png/9594592.png)
چکیده انگلیسی
The electronic states of Ag deposited Ge(0Â 0Â 1) surfaces at 100Â K and their changes after the annealing at room temperature were investigated by using low-temperature angle-resolved photoelectron spectroscopy. Below 1 mono-layer of Ag, the surface did not show any metallic behaviors both at 130Â K and after the annealing at room temperature. At 130Â K, the Ag atoms adsorb as Ag ad-dimer at valley bridge site between the adjacent substrate dimer rows without breaking the Ge dimer structure. After the annealing at room temperature, the signal from the Ge dimer back-bond is significantly modified indicating changes in the dimer structure. All these findings are consistent with the previous observations by scanning tunneling microscopy: thermal diffusion and clustering of initially adsorbed Ag aggregates below 180Â K; transformation of internal structure of Ag islands by further annealing above 240Â K. The present study strongly supports the transformation as a restructuring process between Ag and Ge atoms at the interface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 591, Issues 1â3, 20 October 2005, Pages 108-116
Journal: Surface Science - Volume 591, Issues 1â3, 20 October 2005, Pages 108-116
نویسندگان
Kan Nakatsuji, Yasumasa Takagi, Masamichi Yamada, Yoshitaka Naitoh, Fumio Komori,