کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594617 | 1507971 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor Interface structure of HfNx/SiO2 stack grown by MOCVD using TDEAHf precursor](/preview/png/9594617.png)
چکیده انگلیسی
Hafnium nitride (HfNx) thin films were fabricated for the gate electrode application by metal organic chemical vapor deposition (MOCVD) using tetrakis-diethylamido hafnium (TDEAHf) precursor and NH3 reactant. The characterization and control for the interface between HfNx film and SiO2 substrate were investigated using both XPS and TEM techniques. As a result, HfNx films with low impurities of O and C and smooth interface were prepared on SiO2 substrates; a thin hafnium silicate (HfOxSiy) interlayer was verified to form between HfNx and SiO2. It may result from the interfacial reaction at the initial growth stage. In addition, the interlayer growth was found to be nearly independent of the growth temperature and the length of growth time, but greatly on the precursor partial pressure, which promises an expected capability to engineer the interfacial characteristics.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 588, Issues 1â3, 20 August 2005, Pages 108-116
Journal: Surface Science - Volume 588, Issues 1â3, 20 August 2005, Pages 108-116
نویسندگان
Wenwu Wang, Toshihide Nabatame, Yukihiro Shimogaki,