کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594631 1395887 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Thermodynamic control of germanium quantum dot growth on silicon
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Thermodynamic control of germanium quantum dot growth on silicon
چکیده انگلیسی
Strained epitaxial growth of Ge on Si(0 0 1) produces self-assembled, nanometer scale islands, or quantum dots. We study this growth by atomistic simulation, computing the energy of island structures to determine when and how islanding occurs. The distribution of island sizes on a surface is determined by the relation of island energy to size. Applying the calculated energy per atom to the Boltzmann-Gibbs distribution, we predict size distributions as functions of coverage and temperature. The peak populations around 86,000 atoms (35 nm wide) compare favorably with experiment.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 590, Issue 1, 20 September 2005, Pages 1-8
نویسندگان
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