کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594683 1395896 2005 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Polarization modification of PZT thin films by means of electric fields and stress in scanning force microscopy
چکیده انگلیسی
Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 585, Issue 3, 10 July 2005, Pages 144-154
نویسندگان
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