کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594714 | 1507985 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ag Multilayer island growth on Br-Si(0Â 0Â 1)-(2Â ÃÂ 1) and Ag-induced nano-pitting
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
Low temperature scanning tunneling microscopy was used to study the formation of single crystal nanostructures of Ag on Br-terminated Si(0Â 0Â 1)-(2Â ÃÂ 1) and their interactions with the surface at elevated temperature. Multilayer nanostructures were formed at 640Â K. They were facetted, and they exhibited highly-ordered surfaces that were imaged with atomic resolution to identify the ã0Â 1Â 1ã and ã1Â 1Â 2ã directions on Ag(1Â 1Â 1)-(1Â ÃÂ 1). Heating above 700Â K induced reactions involving Ag and Br and the desorption of AgBr. At these temperatures, contact between the Ag islands and Si(0Â 0Â 1) also led to Si dissolution in the islands, and three dimensional pits bounded by {1Â 1Â 3} facets were produced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 574, Issues 2â3, 10 January 2005, Pages 331-337
Journal: Surface Science - Volume 574, Issues 2â3, 10 January 2005, Pages 331-337
نویسندگان
Koji S. Nakayama, J.H. Weaver,