کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594785 1395905 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br-Si(1 0 0)-(2 × 1)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electron-stimulated desorption from an unexpected source: Internal hot electrons for Br-Si(1 0 0)-(2 × 1)
چکیده انگلیسی
The desorption of Br adatoms from Br-saturated Si(1 0 0)-(2 × 1) was studied with scanning tunneling microscopy as a function of dopant type, dopant concentration, and temperature for 620-775 K. Analysis yields the activation energies and prefactors for desorption, and the former correspond to the energy separation between the Fermi level and Si-Br antibonding states. Thus, electron capture in long-lived states results in Br expulsion via a Franck-Condon transition. Analysis of the prefactors reveals that optical phonons provide the energy needed for the electronic excitation. These results show that desorption induced by an electronic transition can occur in closed system without external stimulus, and they indicate that thermally-excited charge carriers may play a general role in surface reactions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 583, Issue 1, 20 May 2005, Pages L135-L141
نویسندگان
, , , , ,