کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9594988 | 1507961 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces Interaction of SiH3 radicals with deuterated (hydrogenated) amorphous silicon surfaces](/preview/png/9594988.png)
چکیده انگلیسی
Interactions of SiH3 radicals with surfaces of deuterated amorphous silicon (a-Si:D) and hydrogenated amorphous silicon (a-Si:H) films were studied using attenuated total reflection Fourier transform infrared spectroscopy and molecular-dynamics simulations, respectively. SiH3 radicals abstract surface silicon deuterides through an Eley-Rideal abstraction reaction. Surface deuteride abstraction occurs on the same time scale as SiH3 insertion into Si-Si bonds over the substrate temperature range of 60-300 °C. Some fraction of SiH3 adsorbing on the a-Si:D/a-Si:H films dissociates and releases H into the subsurface. These observations are consistent with the temperature independent reaction probability of SiH3 and the temperature dependent smoothening mechanism of a-Si:H thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 598, Issues 1â3, 20 December 2005, Pages 35-44
Journal: Surface Science - Volume 598, Issues 1â3, 20 December 2005, Pages 35-44
نویسندگان
Sumit Agarwal, Mayur S. Valipa, Bram Hoex, M.C.M. van de Sanden, Dimitrios Maroudas, Eray S. Aydil,