کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9595119 | 1507983 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Underpotential deposition of Cd on Ag(1Â 1Â 1): an in situ STM study
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Underpotential deposition of Cd on Ag(1Â 1Â 1): an in situ STM study Underpotential deposition of Cd on Ag(1Â 1Â 1): an in situ STM study](/preview/png/9595119.png)
چکیده انگلیسی
The kinetics and mechanism of Cd underpotential deposition (UPD) and involved surface alloy formation processes in the system Ag(1 1 1)/Cd2+, SO42-, are studied by means of combined electrochemical measurements and in situ scanning tunneling microscopy (STM). The results show that the UPD process starts with a formation of an expanded (diluted) adlayer with a superlattice structure Ag(1 1 1)-(3Ã19)R23.4°. In the underpotential range 50 mV < ÎE < 80 mV this adlayer transforms to a condensed close packed Cd monolayer via a first order phase transition. At long polarization times the condensed monolayer undergoes structural changes involving place exchange processes between Cd atoms and surface Ag atoms. A formation of a second Cd monolayer and a significant Ag-Cd surface alloying take place at lower underpotentials (ÎE < 50 mV). The kinetics of surface alloying are analyzed on the basis of a recently proposed diffusion model including a relatively fast initial formation of a very thin surface alloy film and a subsequent slow alloy growth controlled by solid state diffusion. The anodic dealloying results in an appearance of monatomically deep pits, which disappear quickly at relatively high underpotentials (ÎE > 550 mV) indicating a high mobility of surface Ag atoms.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 9-18
Journal: Surface Science - Volume 576, Issues 1â3, 10 February 2005, Pages 9-18
نویسندگان
S.G. GarcÃa, D.R. Salinas, G. Staikov,