کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9595120 1507983 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrochemical growth of copper on well-defined n-Si(1 1 1):H surfaces
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Electrochemical growth of copper on well-defined n-Si(1 1 1):H surfaces
چکیده انگلیسی
Monohydride-terminated n-Si(1 1 1) electrodes were used as substrates for the electrodeposition of Cu from 0.1 M H2SO4 + 0.1 mM CuSO4. In situ scanning tunneling microscopy, ex situ atomic force microscopy and scanning electron microscopy revealed that (a) the nucleation starts preferentially at surface defects such as etch pits or step edges, and (b) the deposition occurs by a Volmer-Weber growth mode. In situ surface X-ray diffraction on this system, reported for the first time, revealed the structure and the epitaxial relationship of the copper deposit on the Si substrate. Under the X-ray beam, the Cu deposit could be stabilized only with a significant overpotential. Cu clusters grow with the (1 1 1), (1 1 0), and (0 0 1) planes oriented parallel to the Si(1 1 1), with the first two orientations being dominant. Within the Si(1 1 1) plane, Cu clusters can be found in any rotational orientation around the Si(1 1 1) surface normal. The intensity distribution can be described as powder rings. This distribution is, however, peaked along specific directions. For the Cu clusters with Cu(1 1 0)∥Si(1 1 1) it is found that in-plane Cu〈1 1 1〉∥Si〈1 1 0〉. The peaks in the distribution of the Cu clusters with Cu(1 1 1)∥Si(1 1 1) reveal that these Cu clusters are basically rotated by 30° around the Si(1 1 1) surface normal but exhibit additionally a ±4.5° epitaxial rotation around the mean, high symmetry direction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 576, Issues 1–3, 10 February 2005, Pages 19-28
نویسندگان
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