کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9595321 1395931 2005 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bimodal growth of manganese silicide on Si(1 0 0)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Bimodal growth of manganese silicide on Si(1 0 0)
چکیده انگلیسی
Two different growth modes of manganese silicide are observed on Si(1 0 0) with scanning tunneling microscopy. 1.0 and 1.5 monolayer Mn are deposited at room temperature on the Si(1 0 0)-(2 × 1) substrate. The as-grown Mn film is unstructured. Annealing temperatures between room temperature and 450 °C lead to small unstructured clusters of Mn or MnxSiy. Upon annealing at 450 °C and 480 °C, Mn reacts chemically with the Si substrate and forms silicide islands. The dimer rows of the substrate become visible again. Two distinct island shapes are found and identified as MnSi and Mn5Si3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 575, Issue 3, 1 February 2005, Pages 307-312
نویسندگان
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