کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672242 | 1450565 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dynamic NBTI lifetime model for inverter-like waveform
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, a simple yet accurate NBTI lifetime model has been formulated for a pMOSFET working in dynamic AC condition. The model is based on detailed dynamic NBTI (DNBTI) characterization for inverter-like waveform stress. The fitting parameters of the model can be readily obtained from the calibration of one-time DNBTI lifetime measurement for a small set of frequency/duty cycle matrix. After that, it can be employed to estimate the NBTI lifetime for a pMOSFET under any AC operating condition with reasonably good agreement. Additionally, it is shown that the lifetime enhancement by a shorter duty cycle is even more significant than that by a higher frequency. The application of the model to the lifetime estimation of circuits with multiple operation modes is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 7â8, JulyâAugust 2005, Pages 1115-1118
Journal: Microelectronics Reliability - Volume 45, Issues 7â8, JulyâAugust 2005, Pages 1115-1118
نویسندگان
Shyue Seng Tan, Tu Pei Chen, Lap Chan,