کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672262 1450565 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bipolar mechanisms present in short channel SOI-MOSFET transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Bipolar mechanisms present in short channel SOI-MOSFET transistors
چکیده انگلیسی
The set of physical mechanisms present in the body of SOI MOS transistors has been presented. Selected bipolar aspects of physical phenomena usually oversimplified in existing SOI MOS models have been analyzed. The action of parasitic bipolar transistor present in the body of SOI MOS transistor is one of them and seems to become especially important as transistor channel dimensions are reduced.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 7–8, July–August 2005, Pages 1257-1263
نویسندگان
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