کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672268 | 1450566 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Bond strain and defects at interfaces in high-k gate stacks
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The performance and reliability of aggressively-scaled field effect transistors are determined in large part by electronically-active defects and defect precursors at the Si-SiO2, and internal SiO2-high-k dielectric interfaces. A crucial aspect of reducing interfacial defects and defect precursors is associated with bond strain-driven bonding interfacial self-organizations that take place during high temperature annealing in inert ambients. The interfacial self-organizations, and intrinsic interface defects are addressed through an extension of bond constraint theory from bulk glasses to interfaces between non-crystalline SiO2, and (i) crystalline Si, and (ii) non-crystalline and crystalline alternative gate dielectric materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 5â6, MayâJune 2005, Pages 770-778
Journal: Microelectronics Reliability - Volume 45, Issues 5â6, MayâJune 2005, Pages 770-778
نویسندگان
G. Lucovsky, J.C. Phillips,