Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

In the present work, the potential of hafnium silicate (HfxSiyO2) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Thermally stable HfxSiyO2 films are deposited from a single-source MOCVD precursor. I-V and C-V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900 °C O2-anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated.