کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672283 1450566 2005 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Reliability of gate dielectrics and metal-insulator-metal capacitors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Reliability of gate dielectrics and metal-insulator-metal capacitors
چکیده انگلیسی
In this review paper reliability characterisation methods of SiO2 as gate dielectric and metal-insulator-metal capacitors with various dielectrics are discussed. It includes the test structure design, the stress and measurement sequences, the raw data analysis and the extrapolation models of measured time to breakdown to lifetimes at operating conditions and targeted product failure rates. For each topic various references are given where further details are described. Especially pitfalls of approaches and problem areas are highlighted.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 5–6, May–June 2005, Pages 834-840
نویسندگان
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