Impact of interface and bulk trapped charges on transistor reliability

Oxide reliability is a key issue and the main topic of several recent works. We study the impact of gate oxide stress on transistor performances following a methodology similar to oxide lifetime characterisation in capacitors. A universal trend for degradation of the threshold voltage and drain saturation current with injected charge is observed and the impact of boron on trapping enhancement has been separated by comparing n-MOS and p-MOS.