Electrical properties of MIS capacitor using low temperature electron beam gun-evaporated HfAlO dielectrics

A low effective oxide thickness of ∼1.45 nm was achieved in HfAlO films deposited by an electron beam gun evaporator on unheated p-Si substrate. A reduction of the leakage current density from 1 × 10−4 to 4.5 × 10−7 A/cm2, at an electric field 3 MV/cm, with annealing temperature and a breakdown electric field of 10 MV/cm were demonstrated for ultra thin films.