کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9672309 1450566 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
AVD® technology for deposition of next generation devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
AVD® technology for deposition of next generation devices
چکیده انگلیسی
One of the main challenges in semiconductor industry today is the problem that arises with the performance of Moore's Law, doubling every 18 months. For instance, the device shrinking of CMOS based devices calls for new material candidates to replace conventional dielectrics and electrodes. Here, an advanced technology called Atomic Vapour Deposition (AVD®) is presented, which combines the MOCVD advantages of high throughput with atomic layer control and excellent material properties. The discussion is based on high-k oxides and conductive materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 5–6, May–June 2005, Pages 945-948
نویسندگان
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