کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9672320 | 1450566 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200 °C
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
The aim of this study was the testing of various low-k insulators deposited at temperatures below approximately 200 °C for use in copper interconnects. Various spin-on glasses (SOGs), purchased from Filmtronics Inc. and polymers such as the well-known poly(methyl methacrylate) (PMMA), the newly synthesized Poly(2,2,2 tri-fluoro-ethyl methacrylate) (PFEMA) and poly(dymethyl-siloxane) (PDMS) were tested. The above materials were compared with respect to their handling (application, curing, mechanical strength, patterning) and dielectric constant. It was shown that organic polymers containing C-F (PFEMA) and Si-O (PDMS) bonds present considerable advantages (related to the value of k and to handling) for use in Cu/low-k interconnects compared with usual SOGs cured at low temperatures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 45, Issues 5â6, MayâJune 2005, Pages 990-993
Journal: Microelectronics Reliability - Volume 45, Issues 5â6, MayâJune 2005, Pages 990-993
نویسندگان
M. Vasilopoulou, A.M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou,