کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9679500 | 1455082 | 2005 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of phenolic content on tribological behavior of carbonized copper-phenolic based friction material
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
شیمی کلوئیدی و سطحی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
The purpose of the present study is to investigate the effect of phenolic content on mechanical and tribological properties of a series of semi-carbonized copper/phenolic resin-based semi-metallic friction materials with resin contents ranging from 30 to 70Â vol% (5-25Â wt%). Experimental results indicate that all materials reduced in thickness and weight after semi-carbonization treatment. The amounts of the reductions increased with phenolic content. The sample comprising 50Â vol% resin (R5) exhibited the maximum compressive strength, hardness and increase in density after semi-carbonization. Among all materials, R5 demonstrated the greatest potential with high and stable coefficient of friction (COF) value (0.3-0.4) and reasonably low wear. The materials containing 60Â vol% (R6) and 70Â vol% (R7) phenolic resin showed relatively low COF values. The sample containing 40Â vol% resin (R4) faded quickly, while the sample containing 30Â vol% phenolic resin (R3) failed prematurely during testing. Semi-carbonization treatment itself did not cause significant oxidation, but friction-induced heating caused extensive oxidation to surfaces of the materials. More counter-face material was transferred to the surfaces of samples with higher phenolic contents (R4, R5, R6 and R7) during sliding, while more extensive abrasion-type wear occurred to samples with intermediate phenolic contents (R4, R5 and R6).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Wear - Volume 258, Issues 11â12, June 2005, Pages 1764-1774
Journal: Wear - Volume 258, Issues 11â12, June 2005, Pages 1764-1774
نویسندگان
S.C. Ho, J.H. Chern Lin, C.P. Ju,