کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9702766 | 1462920 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dark I-U-T measurements of single crystalline silicon solar cells
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of parasitic resistances on silicon solar cell performance was discussed. The current-voltage I-U characteristics of single crystalline silicon solar cells at different temperatures were measured in the dark. A one and two diodes equivalent model was used to describe the electronic properties of the solar cells. The diode ideality factors, the series and shunt resistance, that determine the fill factor and the efficiency of the solar cell, have been estimated. It was proved that the performance of the tested silicon solar cell can be described with enough accuracy by the one diode equivalent model with series resistance rs equal to 0.1 Ω and an empirical ideality factor mid equal to 1.4.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Conversion and Management - Volume 46, Issues 9â10, June 2005, Pages 1485-1494
Journal: Energy Conversion and Management - Volume 46, Issues 9â10, June 2005, Pages 1485-1494
نویسندگان
Ewa Radziemska,