کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9705308 | 1464613 | 2005 | 12 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A grinding-based manufacturing method for silicon wafers: an experimental investigation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The majority of semiconductors are built on silicon wafers. Future semiconductors will require flatter wafers with a lower price. The lapping-based manufacturing method currently used to manufacture silicon wafers will not be able to meet the ever-increasing demand cost-effectively. This paper reports an experimental investigation into a grinding-based manufacturing method, which has potential to manufacture flat silicon wafers at a lower cost. Background information on semiconductors and silicon wafers is presented first. After a discussion on drawbacks of the lapping-based method, the grinding-based method is described. Next, experimental results with the grinding-based method are presented and discussed. The results from this investigation have demonstrated the potential of the grinding-based method and revealed several directions for future work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Machine Tools and Manufacture - Volume 45, Issue 10, August 2005, Pages 1140-1151
Journal: International Journal of Machine Tools and Manufacture - Volume 45, Issue 10, August 2005, Pages 1140-1151
نویسندگان
Z.J. Pei, Graham R. Fisher, Milind Bhagavat, S. Kassir,