کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9717639 | 1470085 | 2005 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A continuum model for the Liquid Phase Diffusion growth of bulk SiGe single crystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
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چکیده انگلیسی
In this article, we present a computational model for the growth of SixGe1âx single crystals by Liquid Phase Diffusion (LPD) from the germanium-rich side of the binary SixGe1âx phase diagram. The model accounts for some important physical features of the LPD growth process of SixGe1âx such as a growth-zone design on the thermal field, the buoyancy induced convective flow and its effect on the growth process, the evolution of growth interface, and the variation of growth velocity with time. Two- and three-dimensional numerical simulations were carried out. Simulation results show that the natural convection in the solution is very strong during the initial stages of the growth process, and gets weaker as the growth progresses. Diffusion becomes the dominant mass transport mechanism during the rest of the growth process. Computed growth interface shapes and growth velocities agree with experimental observations.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: International Journal of Engineering Science - Volume 43, Issues 13â14, September 2005, Pages 1059-1080
Journal: International Journal of Engineering Science - Volume 43, Issues 13â14, September 2005, Pages 1059-1080
نویسندگان
Mehmet Yildiz, Sadik Dost,