کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9776234 | 1509483 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
بیومتریال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP) Electrical Effect in Organic Thin-Film Transistors Using Polymerized Gate Insulators by Vapor Deposition Polymerization (VDP)](/preview/png/9776234.png)
چکیده انگلیسی
We report that the organic thin film transistors were fabricated by the organic gate insulators transistor with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 2,2-bis(3,4-dicarboxyphenyl) hexafluoropropane dianhydride (6FDA) and 4,4â²-oxydianiline (ODA), and cured at 150 °C for 1 hour followed by 200 °C for 1 hour. Details on the explanation of organic thin-film transistors (OTFTs) electrical characteristics of 6FDA-ODA as gate insulators fabricated thermal co-deposition method.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Synthetic Metals - Volume 154, Issues 1â3, 22 September 2005, Pages 141-144
Journal: Synthetic Metals - Volume 154, Issues 1â3, 22 September 2005, Pages 141-144
نویسندگان
S.W. Pyo, D.H. Lee, J.R. Koo, J.H. Kim, J.H. Shim, J.S. Kim, Y.K. Kim,