Field-effect mobility anisotropy in PDA-PTS single crystals

We studied the current-voltage (I-V) characteristics and the field effect mobility (μFET) of polydiacetylene single crystals in the temperature range 4 K-300 K. Non-Ohmic I-V characteristics reveal the maximum of the Drain-Source current (IDS) at 170 K while the μFET maximum appears at 130 K. The IDS along the backbone chains increases with the positive gate voltage (VG) whereas the IDS between the backbone chains increases with the negative VG. The anisotropy of the conductivity and the μFET are observed. The current parallel to the PDA backbone is ∼ 10-1000 times higher than that perpendicular, while the electron mobility parallel to the PDA backbone is about 100 times higher than that perpendicular.