کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9778036 | 1510568 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A simulation analysis of FIBL in decananometer Double-Gate MOSFETs with high-κ gate dielectrics
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this work, the degradation of electrical performances of Double-Gate MOSFET due to the fringing induced barrier lowering (FIBL) effect induced by high-κ gate dielectrics is investigated using a two-dimensional quantum-mechanical simulation code. Our numerical results show that all electrical parameters, such as the threshold voltage (VT), device immunity to short-channel effects, off-state current (Ioff), and subthreshold slope (S) are degraded when κ increases (3.9 < κ < 100). This degradation is both function of the channel length and the gate dielectric stack composition (number of layers, κ value). In particular, it is shown that the introduction of a thin (<1 nm thick) interfacial oxide layer can reduce or even completely suppress the FIBL for a given equivalent oxide thickness of the gate dielectric stack.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 21â23, 15 July 2005, Pages 1897-1901
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 21â23, 15 July 2005, Pages 1897-1901
نویسندگان
J.L. Autran, D. Munteanu, M. Bescond, M. Houssa, A. Said,