کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9778050 | 1510569 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Applicability of the Meyer-Neldel rule in a-Se90Ge10âxInx thin films in presence of light
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
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چکیده انگلیسی
Temperature dependence of conductivity is measured in dark as well as in presence of light in amorphous thin films of Se90Ge10âxInx in the temperature range 285-365Â K and in the intensity range 6400-10Â 750Â lx. It is observed that pre-exponential factor (Ï0) depends on activation energy (ÎE). A straight line between lnÏ0 and ÎE indicates the presence of MN rule in dark as well as in presence of light. A strong correlation between MN conductivity pre-factor Ï00 and characteristic energy kT0 has also been observed. The origin of this correlation and the MN rule can be attributed to the effect of the exponential energy distribution of defect traps.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 19â20, 1 July 2005, Pages 1577-1581
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 19â20, 1 July 2005, Pages 1577-1581
نویسندگان
Sangeeta Singh, R.K. Shukla, A. Kumar,