Threshold restoration effects in γ-irradiated chalcogenide glasses

The influence of annealing temperature Ta on the optical absorption edge in the previously γ-irradiated glasses of Ge-Sb(As)-S ternaries of pseudobinary 'stoichiometric' Sb(As)2S3-GeS2 and non-stoichiometric Sb(As)2S3-Ge2S3 cut-sections is studied. It is established that the post-irradiation thermally produced changes of the optical absorption edge differ in various Ta regions. Threshold restoration effects are found beginning from some intermediate onset temperature Ton for all investigated glasses. Compositional features of the apparent activation energies determined in corresponding Ta regions are analyzed. A possible mechanism for the observed effects is discussed.