| کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن | 
|---|---|---|---|---|
| 9778156 | 1510573 | 2005 | 8 صفحه PDF | دانلود رایگان | 
عنوان انگلیسی مقاله ISI
												Oxidation kinetics of the quasicrystalline i-AlCuFe phase compared with that of crystalline Ï-AlCuFe and pure aluminum
												
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																																												موضوعات مرتبط
												
													مهندسی و علوم پایه
													مهندسی مواد
													سرامیک و کامپوزیت
												
											پیش نمایش صفحه اول مقاله
												 
												چکیده انگلیسی
												The oxidation of the quasicrystalline alloy i-AlCuFe has been compared with that of tetragonal Ï-AlCuFe and that of pure aluminum. At 600 °C, for low exposure to oxygen in UHV conditions (up to 5000 L), much smaller thicknesses of oxide have been observed on i-AlCuFe by AES and depth profiling. After oxidations of 105 L, oxide crystallites are clearly observed by SEM on the surface of Ï-AlCuFe and pure aluminum, in particular in the center of the grains. Such is not the case on i-AlCuFe grains. These oxide crystallites give rise after ion etching to cones structure on the surface of Ï-AlCuFe and pure aluminum whereas the i-AlCuFe surface remains very smooth. However when oxidation is performed at 700 °C, oxide crystallites also appear on the whole icosahedral grains. These results show that the crystalline and the quasicrystalline phases have a different kinetics in the oxide growth, due to, in particular, a delay in the nucleation and growth rate of the oxide on the quasicrystalline phase. It is assumed that this difference is linked to the impossible epitaxial growth of the γ-Al2O3 oxide on the aperiodic lattice of the i-AlCuFe phase.
											ناشر
												Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 10â11, 15 April 2005, Pages 802-809
											Journal: Journal of Non-Crystalline Solids - Volume 351, Issues 10â11, 15 April 2005, Pages 802-809
نویسندگان
												D. Rouxel, M. Gil-Gavatz, P. Pigeat, B. Weber,