کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9781851 1511638 2005 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Low-temperature lattice thermal expansion of the II-VI semiconductor ZnSe
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Low-temperature lattice thermal expansion of the II-VI semiconductor ZnSe
چکیده انگلیسی
The low-temperature lattice thermal expansion of the wide gap semiconductor ZnSe is investigated using the quasi-harmonic theory of thermal expansion. The generalized Grüneisen parameters (GPs) of the elastic waves propagating in different directions with respect to the [001] crystallographic axis are calculated using the second-and third-order elastic constants. The values of the generalized GPs γj are generally positive except for γ2 from θ=25 to 65°. The Brugger gamma is calculated and the low-temperature limit of the Grüneisen gamma is determined using the procedure of Menon and Rao. The low-temperature limit γ¯ has been obtained as 0.46 for ZnSe. The volume expansion is expected to be positive down to absolute zero for ZnSe, since γ¯ is positive.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Physics and Chemistry of Solids - Volume 66, Issue 1, January 2005, Pages 11-14
نویسندگان
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