کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9783057 1511868 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Structural behaviour of ZnSxSe1−x films deposited by close-spaced evaporation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Structural behaviour of ZnSxSe1−x films deposited by close-spaced evaporation
چکیده انگلیسی
ZnSxSe1−x is considered to be one of the potential alternatives to CdS as a window and/or buffer layer in polycrystalline heterojunction solar cells. Thin films of ZnSxSe1−x with compositions x = 0.0, 0.25, 0.5, 0.75 and 1.0 have been prepared using close-spaced evaporation technique. The films were deposited at different substrate temperatures in the range 200-400 °C. The grown films have been characterized using X-ray diffractometer and scanning electron microscope (SEM) in order to determine the crystalline phases present and the surface topography. The X-ray diffraction data showed that the films deposited at substrate temperatures in the range of 275-325 °C were polycrystalline and showed only ZnSxSe1−x phase without any additional phases. These layers had the preferred orientation along the (1 1 1) direction and exhibited cubic structure. The variation of lattice constants with S/Se atomic ratio in the films followed the Vegard's law.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 92, Issues 2–3, 15 August 2005, Pages 448-452
نویسندگان
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