کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783077 | 1511868 | 2005 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering Preparation of heteroepitaxial LaNiO3 thin films on a SrTiO3 substrate for growing an artificial superlattice with RF sputtering](/preview/png/9783077.png)
چکیده انگلیسی
High-quality heteroepitaxial LaNiO3 (LNO) thin films were successfully grown on SrTiO3 (STO) substrates with RF-magnetron sputtering deposition at substrate temperatures in a range 150-650 °C. Azimuthal scans around the surface Bragg peak of the film and lattice images from a high-resolution transmission electron microscope (HRTEM) show that a well epitaxial relationship between film and substrate is achievable through RF sputtering growth. BaTiO3/SrTiO3 (BTO/STO) artificial superlattices subsequently deposited on LNO-coated STO substrates with RF sputtering were found also to have a large dielectric constant and a small dissipation factor.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 92, Issues 2â3, 15 August 2005, Pages 585-590
Journal: Materials Chemistry and Physics - Volume 92, Issues 2â3, 15 August 2005, Pages 585-590
نویسندگان
Hsin-Yi Lee, C.-H. Hsu, Y.-W. Hsieh, Yen-Hua Chen, Yuan-Chang Liang, Tai-Bor Wu, L.J. Chou,