B implanted at room temperature in crystalline Si: B defect formation and dissolution

The thermal evolution in the 400-950 °C range of the B complexes has been inferred both by B lattice location measurements and electrical activation. At low temperature (<700 °C) only 10% of the total B dose is active and a significant increase of randomly located B occurs. A significant electrical activation consistent with the concentration of substitutional B occurs at temperature higher than 800 °C. The data are interpreted in terms of a formation and dissolution of the B complexes.