کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783935 | 1512026 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Submicron confinement effect on electrical activation of B implanted in Si
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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چکیده انگلیسی
In this work we studied the effect of B implantation in Si through submicron laterally confined area on B clustering and its electrical activation. For this study, we implanted B 3 keV into a Si wafer grown by Molecular Beam Epitaxy (MBE) through a patterned oxide mask with opening widths down to 0.38 μm. Then, we annealed the sample at 800 °C for several times up to 120 min and monitored the 2D carrier profile by quantitative high resolution Scanning Capacitance Microscopy (SCM). We show that by reducing the opening widths, not only the B clustering is strongly reduced, but also the B cluster dissolution is accelerated. This demonstrates the beneficial role of implanted B confinement on the B electrical activation. The above results have a significant impact in the modern Si based electronic device engineering.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 257-260
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 257-260
نویسندگان
E. Bruno, S. Mirabella, G. Impellizzeri, F. Priolo, F. Giannazzo, V. Raineri, E. Napolitani,