کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783937 | 1512026 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Boron interaction with extended defects induced by He-H co-implantation in Si
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Boron interaction with extended defects induced by He-H co-implantation in Si Boron interaction with extended defects induced by He-H co-implantation in Si](/preview/png/9783937.png)
چکیده انگلیسی
After evidencing the impact of the H addition on cavities, this paper will focus on boron interactions with He-H induced defects. For this purpose, uniformly high doped (1018 B cmâ3) P-type <1 1 1> wafers were used. He implantation at 40 keV for a dose of 5 or 1 Ã 1016 He+ cmâ2 followed or not by H implantation at 36 keV for different doses were carried out. Samples were subsequently furnace annealed for 1 h at temperatures ranging from 500 to 900 °C. Transmission electron microscopy (TEM) observations allow us to monitor the defect evolution. Secondary ion mass spectrometry (SIMS) was used to follow the boron and hydrogen profiles while the spreading resistance profiling (SRP) gives the activation dependence with the implantation and the annealing temperature. This work enlightens the large impact of H on cavity growth and clarifies the interaction of B with extended defects in presence or absence of hydrogen.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 266-270
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 266-270
نویسندگان
G. Gaudin, F. Cayrel, C. Bongiorno, R. Jérisian, C. Dubois, V. Raineri, D. Alquier,