کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783952 | 1512026 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of temperature on capacitance-voltage characteristics of SOI
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of temperature on capacitance-voltage (C-V) characteristics of Si/SiO2 interfaces in SIMOX was investigated. The results obtained for SIMOX were compared with the C-V characteristics of Si/SiO2 and Si/SiNx devices. The results suggested that the positively charge centers in buried SiO2 layer were located closer to the superficial Si layer of SIMOX. These positively charged centers considerably affected the capacitance of SIMOX-based devices upon increase of device temperature. It was also found that the MOS type devices fabricated using SIMOX had a higher temperature effect than MIS structures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 331-334
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 331-334
نویسندگان
Ahalapitiya H. Jayatissa, Zhiyu Li,