کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783958 | 1512026 | 2005 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1Â 0Â 0)/SiO2 interfaces
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1Â 0Â 0)/SiO2 interfaces Ab initio study of the effect of hydrogen and point defects on arsenic segregation at Si (1Â 0Â 0)/SiO2 interfaces](/preview/png/9783958.png)
چکیده انگلیسی
The previously suggested segregation model for arsenic at Si/SiO2 interfaces based on a combined trapping/pairing model [J. Dabrowski, H.-J. Müssig, V. Zavodinsky, R. Baierle, M.J. Caldas, Phys. Rev. B 65 (2002) 245305] requires high binding energies for interface vacancies, which our results of â¼0.2Â eV cannot confirm. As an alternative explanation, we present ab initio results which show that As and hydrogen bond with an energy gain of 1.5-3Â eV with their minimum-energy position at the interface, which creates additional trapping sites for As segregation. The inclusion of hydrogen into the modeling might thus be able to explain the differences between the previous model and experiments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 359-362
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 359-362
نویسندگان
Karthik Ravichandran, Wolfgang Windl,