کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
9783970 | 1512026 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Physically based modeling of dislocation loops in ion implantation processing in silicon
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Physically based modeling of dislocation loops in ion implantation processing in silicon Physically based modeling of dislocation loops in ion implantation processing in silicon](/preview/png/9783970.png)
چکیده انگلیسی
Under certain conditions, particularly for high-dose implants, {3Â 1Â 1} rod-like defects can evolve into dislocation loops (DLs). In this work, we have developed a model for the transformation of {3Â 1Â 1}-defects into DLs, with a transformation rate that is controlled by a size-dependent energy barrier. The model has been included and calibrated in an atomistic kinetic Monte Carlo simulator. This simulator includes a description of the size distribution of {3Â 1Â 1}-defects (required for a size-based model) and of the amorphization and recrystallization (needed to provide reliable information on the number of interstitials in the end-of-range region). Extended defects are implemented according to realistic geometries, giving a direct assessment of the correct capture volume for diffusing defects. The model correctly predicts the formation of DLs during the annealing that follows ion implants, both for amorphizing and non-amorphizing conditions, and provides a realistic description of damage morphology. The possible role of stress on DL formation is also discussed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 404-408
Journal: Materials Science and Engineering: B - Volumes 124â125, 5 December 2005, Pages 404-408
نویسندگان
P. Castrillo, I. Martin-Bragado, R. Pinacho, M. Jaraiz, J.E. Rubio, K.R.C. Mok, F.J. Miguel-Herrero, J. Barbolla,