Enhanced silicon band edge related radiation: Origin and applicability for light emitters

We have investigated the influence of phosphorous implantation and annealing on the photoluminescence spectra of Si. The implantation was carried out at 750 keV with doses between 1 × 1013 and 2 × 1014 cm−2. We show that the band edge luminescence of the implantation modified layer at room temperature is low compared to the luminescence from the substrate. The photoluminescence spectra at 80 K are found to depend strongly on the annealing treatment performed (rapid thermal versus furnace annealing). For high implantation doses, a shift in the two-phonon-assisted line is observed and associated with a strong strain field. The band edge luminescence does not show quenching, but increases upon increase of temperature for the highest implantation dose.